An Overview of SiC High-Voltage Power Devices and High-Temperature ICs

Silicon carbide (SiC) is one of the ideal semiconductor materials suitable for high-voltage power devices and high-temperature ICs. Although SiC power MOSFETs have been commercialized, the performance is still far from the material limit. MOS-Hall effect measurements and theoretical study revealed that the low electron mobility in n-channel MOSFETs is ascribed to strong Coulomb scattering by trapped electrons. By minimizing thermal oxidation, two-fold improvement of mobility was achieved. The mobility of SiC pchannel MOSFETs is relatively high (approximately $30 \mathrm{~cm}^{2} / \mathrm{Vs}$ on the non-polar face), indicating a potential SiC FinFET-based CMOS devices. For very high-temperature applications, SiC complementary JFET (CJFET), which consists of a pair of normally-off p- and n-channel JFETs, has been proposed. Successful modeling of SiC CJFET by taking account of the incomplete ionization of dopants is also described.