Practical Simulation and Test Strategies for Advanced Heterojunction Bipolar Transistors

This paper explores common challenges encountered during electrical test or simulation of advanced heterojunction bipolar transistors (HBTs), including thermal runaway, collector-base avalanche, pinch-in, and stress-induced degradation (aging). Insight into each effect is presented in the context of typical test procedures used during device evaluation. The benefits and pitfalls of various biasing schemes are discussed in order to identify practical approaches to broad-bias characterization for both DC and AC test.