Design kit development on a 300mm GaN-on-Si demonstration platform with integrated Si pMOS

Gallium Nitride electronics will provide impactful efficiency and size benefits to many industries. But to unleash its full potential, a systems approach is necessary with tight integration of complementary low-voltage devices for logic, driver and bias blocks alongside performant high-voltage devices and appropriate passives, all in a unified design kit. This work describes Intel’s on-going progress with such a platform for 300 mm R&D prototyping of GaN systems, including a full-featured backend, an embrace of industry-standard compact models, design considerations for integration of E-mode Gallium Nitride MOSHEMTs with Si pMOSFETs, and further devices in development to complete the designer’s toolkit.

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Publication Details

Published
2024-10-27
DOI
https://doi.org/10.1109/bcicts59662.2024.10745683
Citations
2
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.62
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Design kit development on a 300mm GaN-on-Si demonstration platform with integrated Si pMOS

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2 citations
GaN-based semiconductor devices and materials
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article

Design kit development on a 300mm GaN-on-Si demonstration platform with integrated Si pMOS

Nachiket Desai, Dimitri Frolov, Niloy Kundu, Heli Vora, T. Hoff, Said Rami, Pratik Koirala, Narayanan Krishnaswamy, Samuel James Bader, Qiang Yu, Andrey Vyatskikh, Ibukunoluwa Momson, Parvinder Kaur, M. Radosavljević, S Jayaprakash, Abdul Asif, Han Wui Then, Paul Nordeen, Jag Rangaswamy, Michael Beumer, Alvaro D. Latorre-Rey, Sanjeev Kumar, Mark W. Hansen, Ahmad Zubair, Soumen Sarkar, Abhijeet Khobragade, Yashwanth Pathivada, Jagannathan Vasudevan
article en
2 citations

Abstract

Gallium Nitride electronics will provide impactful efficiency and size benefits to many industries. But to unleash its full potential, a systems approach is necessary with tight integration of complementary low-voltage devices for logic, driver and bias blocks alongside performant high-voltage devices and appropriate passives, all in a unified design kit. This work describes Intel’s on-going progress with such a platform for 300 mm R&D prototyping of GaN systems, including a full-featured backend, an embrace of industry-standard compact models, design considerations for integration of E-mode Gallium Nitride MOSHEMTs with Si pMOSFETs, and further devices in development to complete the designer’s toolkit.

Intel (United States) (US), Intel (Germany) (DE), Foundry (United Kingdom) (GB)
Industry, innovation and infrastructure
Openalex Percentile: Top 32%
GaN-based semiconductor devices and materials
0.62
DOISourceOpenAlex
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