On the Safe Operating Area of InP HBTs
The safe-operating area of an advanced InP HBT technology is studied experimentally using pulsed, DC and RF as well as load-pull measurements. To study the implications of the results on circuit performance, a power amplifier cell is analyzed using HICUM/L2. Safe-operating-area related consequences for circuit design, technology development, compact modeling and device characterization are outlined.
Authors
- Thomas Zimmer (ORCID: https://orcid.org/0000-0002-4311-0969)
- Maximilian Froitzheim (ORCID: https://orcid.org/0009-0009-4432-2494)
- M. Schröter (ORCID: https://orcid.org/0000-0002-5432-716X)
- Xiaodi Jin (ORCID: https://orcid.org/0000-0002-7800-9000)
- Guangsheng Liang (ORCID: https://orcid.org/0009-0003-1031-1339)
- Markus Müller (ORCID: https://orcid.org/0000-0003-1058-1649)
- Sébastien Frégonèse (ORCID: https://orcid.org/0000-0002-1829-2633)
- Christoph Weimer (ORCID: https://orcid.org/0000-0002-6005-0937)
Institutions
- Centre National de la Recherche Scientifique (FR)
- Université de Bordeaux (FR)
- Laboratoire de l'Intégration du Matériau au Système (FR)
- Institut Polytechnique de Bordeaux (FR)
- Technische Universität Dresden (DE)
Publication Details
- Published
- 2024-10-27
- DOI
- https://doi.org/10.1109/bcicts59662.2024.10745684
- Citations
- 1
- Primary Topic
- CCD and CMOS Imaging Sensors
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- National Science Foundation