Towards 500GHz f<sub>MAX</sub> 140nm SiGe BiCMOS Technology for 5G/6G Applications
Continued advancements in SiGe BiCMOS technology have enabled the design of mmWave integrated circuits to serve various markets, such as automotive radar, 5G and upcoming 6G. As application requirements push to higher frequency bands, further performance improvements are needed. The focus of this paper is to report on work done to improve the RF performance of SiGe HBT devices implemented using both non-selective and selective epitaxial base architectures in a 140 nm BiCMOS technology. The technology development challenges are discussed, along with device results.
Authors
- P.H.C. Magnée
- Thiago H. Both (ORCID: https://orcid.org/0000-0003-0016-1894)
- G. Anderson
- J.J.T.M. Donkers
- Muhammad Moinuddin (ORCID: https://orcid.org/0000-0003-4735-0692)
- I. To
- Ihor Brunets
- Ljubo Radic
- P.G.M. Sebel
- Ronald Werkman
- Pankaj Kumar Uttwani
- J. John
- J. Kirchgessner
Institutions
- NXP (Germany) (DE)
- Silicon Labs (United States) (US)
Publication Details
- Published
- 2024-10-27
- DOI
- https://doi.org/10.1109/bcicts59662.2024.10745690
- Citations
- 2
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.42
Funders
- Ministry of Economic Affairs