A Biasing Scheme for the Gain Compression Point Optimization of HBT Cascode D-Band LNAs

Cascode amplifiers with a matching network between the common-emitter (CE) and the common-base (CB) HBTs are popular in the sub-THz band for their enhanced gain. The stage is analyzed in this paper with focus on the large-signal behavior. It is first observed that the CE-CB interstage network can push the CB out of the linear class-A regime, limiting the input power at 1 dB gain compression. It is then shown that the issue can be avoided with a suitable biasing scheme, leading to enhanced dynamic range with superior power efficiency. The concept is applied to the design of a D-band LNA in BiCMOS technology. With a quiescent power consumption of 20 mW from 2 V supply, the LNA shows 17.5 dB gain and 5.5 dB NF at 170 GHz. The output-referred 1dB compression point is 4.2dBm with 9% power efficiency at 175 GHz. Compared to previously reported LNAs in the same band, measured results demonstrate a remarkable dynamic range improvement with the the highest power efficiency.

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Published
2024-10-27
DOI
https://doi.org/10.1109/bcicts59662.2024.10745692
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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article

A Biasing Scheme for the Gain Compression Point Optimization of HBT Cascode D-Band LNAs

Guglielmo De Filippi, Andrea Mazzanti, L Serra, Lorenzo Piotto
Radio Frequency Integrated Circuit Design
article

A Biasing Scheme for the Gain Compression Point Optimization of HBT Cascode D-Band LNAs

Guglielmo De Filippi, Andrea Mazzanti, L Serra, Lorenzo Piotto
article en

Abstract

Cascode amplifiers with a matching network between the common-emitter (CE) and the common-base (CB) HBTs are popular in the sub-THz band for their enhanced gain. The stage is analyzed in this paper with focus on the large-signal behavior. It is first observed that the CE-CB interstage network can push the CB out of the linear class-A regime, limiting the input power at 1 dB gain compression. It is then shown that the issue can be avoided with a suitable biasing scheme, leading to enhanced dynamic range with superior power efficiency. The concept is applied to the design of a D-band LNA in BiCMOS technology. With a quiescent power consumption of 20 mW from 2 V supply, the LNA shows 17.5 dB gain and 5.5 dB NF at 170 GHz. The output-referred 1dB compression point is 4.2dBm with 9% power efficiency at 175 GHz. Compared to previously reported LNAs in the same band, measured results demonstrate a remarkable dynamic range improvement with the the highest power efficiency.

University of Pavia (IT)
Affordable and clean energy
Openalex Percentile: Top 82%
Radio Frequency Integrated Circuit Design
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