High-Performance SiGe Heterojunction Phototransistor in a Commercial SiGe BiCMOS Platform for Free-Space Optical Receivers
A high-performance SiGe heterojunction phototransistor (HPT) with peak responsivity of $12.5 \mathrm{~A} / \mathrm{W}$ at 850 nm and an optical transition frequency of 150 GHz is developed in a commercial SiGe BiCMOS technology platform by optimizing the lateral geometry of SiGe heterojunction bipolar transistors (HBTs). An optical receiver based on the proposed SiGe HPT with $\gt40 \mathrm{~dB} \Omega$ gain and 10 GHz bandwidth is demonstrated.
Authors
- Jeffrey W. Teng (ORCID: https://orcid.org/0000-0003-1578-3426)
- Milad Frounchi (ORCID: https://orcid.org/0000-0002-3488-2174)
- George N. Tzintzarov (ORCID: https://orcid.org/0000-0002-5027-4291)
- John D. Cressler (ORCID: https://orcid.org/0000-0001-8268-5135)
- Mozhgan Hosseinzadeh (ORCID: https://orcid.org/0000-0002-2564-1256)
Institutions
- Georgia Institute of Technology (US)
Publication Details
- Published
- 2024-10-27
- DOI
- https://doi.org/10.1109/bcicts59662.2024.10745667
- Citations
- 1
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21