A Family of Physics-Based Models for Monolithic GaN Integration

This paper provides a brief overview of the family of physics-based MIT Virtual-source Gallium-nitride (MVSG) compact models, including those for Gallium-nitride (GaN) based transistors, multi-channel Schottky diodes, and transmission line (TLM) structures with nonlinear resistance. A coherent model formulation has been adopted across these devices through a modular approach using a universal set of basic modules. We will introduce the the model formulation and the basic modules with the explanation of underlining device phyiscs. Various features, including those non-linear effects critical for GaN applications, such as trapping, self heating, will also be explained and demonstrated. Given its accuracy, scalability and flexibility, this coherent family of physics-based GaN device compact models provide a solid foundation for the development of Process Design Kit for monolithic GaN technology.