10-GSymbols/s Supply Modulated 250-GHz SiGe HBT Transmitter RF Front-End with 6.8-dBm Peak Modulated Power
A 250-GHz SiGe HBT (fT and $\mathrm{f}_{\text {max }}$ of $\mathbf{3 0 0} \mathbf{~ G H z}$ and 450 GHz) transmitter RF front-end using supply modulation at 10GSymbols/s along with a 16-customized-APSK (APSK ${ }_{c}$) constellation is used to generate instrumentation limited 40-Gbps signals with a peak modulated power of 6.8 dBm and an EVM of -18.9 dB, while consuming $\sim 1 W$ of DC power. The peak modulated output power and efficiency for the average modulated power generation of the transmitter RF front-end is 3 X and 2.3 X higher than when conventional QAM modulation with a backoff is employed. The $6.8-\mathrm{dBm}$ peak modulated power is the highest among the reported in literature.
Authors
- Suhwan Lee (ORCID: https://orcid.org/0000-0002-3996-2181)
- Oded Kenneth
- Shenggang Dong (ORCID: https://orcid.org/0000-0002-4530-5065)
- Wooyeol Choi (ORCID: https://orcid.org/0000-0002-6248-0674)
- Haidong Guo (ORCID: https://orcid.org/0000-0003-1820-5074)
- Frank Zhang (ORCID: https://orcid.org/0000-0001-9946-6502)
- Suprovo Ghosh (ORCID: https://orcid.org/0009-0004-0217-6701)
Institutions
- Seoul National University (KR)
- The University of Texas at Dallas (US)
Publication Details
- Published
- 2024-10-27
- DOI
- https://doi.org/10.1109/bcicts59662.2024.10745659
- Citations
- 3
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.63