140-GHz Transmit and Receive Front-end Circuits with 10.8-dBm P<sub>sat</sub> and 5.9-dB NF in a 45-nm BiCMOS SOI Process
We present the design and implementation of 140GHz Transmit/Receive (T/R) front-end circuits for D-band $(110-170 \mathrm{GHz}$) wireless communication or radar. Leveraging a state-of-the-art 45-nm BiCMOS SOI process, the FEM integrates a Low-Noise Amplifier (LNA), Power Amplifier (PA), and T/R switch. The LNA, featuring a hybrid cascode architecture, achieves a minimum noise figure (NF) of 4.5 dB at 144 GHz. The T/R switch featuring base matching exhibits an insertion loss of 1.4 dB and isolation exceeding 17 dB at 140 GHz. In receive (RX) mode, the measured gain is 7.7 dB and NF is 5.9 dB at 140 GHz. In transmit (TX) mode, the peak power-added efficiency (PAE) is 9.3% at a $4.5-\mathrm{dB}$ gain at 132 GHz.
Authors
- James F. Buckwalter (ORCID: https://orcid.org/0000-0002-9390-0897)
- Everett O’Malley
- Wonho Lee (ORCID: https://orcid.org/0000-0001-8159-9067)
Institutions
- University of California, Santa Barbara (US)
Publication Details
- Published
- 2024-10-27
- DOI
- https://doi.org/10.1109/bcicts59662.2024.10745722
- Citations
- 2
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.42