Advances in GaN HEMT and GaN Power Amplifier Techniques for Base-Stations

Gallium nitride (GaN) high electron mobility transistor (HEMT) technology has become the dominant solution for RF communication infrastructure applications for 5G networks and beyond. This paper presents application of our recently released $0.25 \mu \mathrm{~m}$ gate length GaN HEMT technology for enabling wideband operation of an integrated power amplifier module for 3.4-4.0 GHz operation delivering 32 dB gain and > 44% drain efficiency over the 600 MHz bandwidth in a small 10x6 mm$^{2}$ form factor, making it particularly suitable for 64T 5G mMIMO systems. In this contribution, we demonstrate how our technology performance improvements are leveraged for compelling product enhancements increasing the operating frequency range, gain and efficiency compared to our previous generation products.