Practical Dimensions of Contemporary GaN Modeling

This paper provides an overview of current GaN device modeling techniques along with recent advances implanted in practical and commercially available solutions. The empirical and physics-based compact models are reviewed with focus on enhanced versions of the Angelov and ASM-HEMT models. Enhancements of the standard ASM-HEMT model with improved charge model and advanced trap modeling are discussed. Improved large-signal validation results are shown. Furthermore, practical error metrics for various model validations are presented to provide a quantitative evaluation of the accuracy of nonlinear models. Advanced nonlinear embedding model-based PA design approach is also discussed.