Physics-Based Compact Model for GaN-Based Non-linear Transmission Line Resistors

This paper presents a novel, comprehensive physics-based model for capturing non-ideal effects in GaN transmission line resistors for use in monolithic GaN integrated circuits. The model captures the important effects of non-linear resistance, including current saturation, self-heating and thermal coupling, and charge trapping, and is closely related to the industry-standard MVSG GaN HEMT Compact Model. Good agreement with measurement is achieved, validating the model and demonstrating scalability with bias, device dimensions and temperature. The results are applied to a simple power amplifier circuit to demonstrate the necessity of adopting an accurate non-linear resistor model in practical circuit design.