A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm P<sub>sat</sub> and 24.3 % PAE in a 250-nm InP HBT Technology
This paper presents a high-power high-efficiency stacked D-band power amplifier (PA) in a 250-nm HBT technology. The pseudo-differential PA is 2-way power-combined with a power combining network exhibiting a single-transformer footprint and a low loss by reflecting asymmetry leaking to the common mode. The presented PA has a saturated output power of 20.9 dBm and a peak power-added efficiency (PAE) of 24.3%. A small-signal gain of $\mathbf{1 4. 2} \mathbf{d B}$ is obtained with a 3-dB bandwidth of 19 GHz.
Authors
- Kristof Vaesen (ORCID: https://orcid.org/0000-0001-9971-3593)
- G. Gramegna
- Mark Ingels
- Piet Wambacq (ORCID: https://orcid.org/0000-0003-4388-7257)
- Sehoon Park (ORCID: https://orcid.org/0000-0002-9029-596X)
- Dongyang Yan (ORCID: https://orcid.org/0000-0001-6598-7705)
- Yang Zhang (ORCID: https://orcid.org/0000-0002-1540-2462)
- Arno Hemelhof
Institutions
- Kyungpook National University (KR)
- IMEC (BE)
Publication Details
- Published
- 2024-10-27
- DOI
- https://doi.org/10.1109/bcicts59662.2024.10745714
- Citations
- 2
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.42