A K<sub>u</sub>-Band SiGe:C Power Amplifier with 24.8 dBm Output Power and 35.6% Peak PAE
This paper presents a wideband power amplifier for the $\mathrm{K}_{\mathrm{u}}$-Band. The architecture of the single PA cell is a fully differential topology. For full characterization of the differential topology and its benefits additional PAs with passive power combining and baluns are also investigated. The PAs are fabricated in Infineon’s BiCMOS production technology B11HFC which offers HBTs with an $f_{\mathrm{T}}$ of 250 GHz and $f_{\max }$ of 370 GHz. The single PA cell achieves a peak output power of 24.8 dBm and a peak PAE of 35.6% at 13 GHz. The quiescent current of the single PA-cell is 181 mA from a single 3.3V supply.
Authors
- Nils Pohl (ORCID: https://orcid.org/0000-0001-5362-638X)
- Klaus Aufinger (ORCID: https://orcid.org/0000-0002-7884-7987)
- Christian Bredendiek (ORCID: https://orcid.org/0000-0002-4093-3468)
- Jan Wessel (ORCID: https://orcid.org/0000-0003-3522-447X)
Institutions
- Infineon Technologies (Germany) (DE)
- Fraunhofer Institute for High Frequency Physics and Radar Techniques (DE)
Publication Details
- Published
- 2024-10-27
- DOI
- https://doi.org/10.1109/bcicts59662.2024.10745665
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00