Morphology and structural properties of Sb2(SxSe1-x)3 thin film absorbers for solar cells
Using the thermal evaporation method, thin crystalline films of Sb2(Sx Se1-x)3 are produced at the substrate temperature of 300℃. The mixed powders of the Sb2S3 and Sb2Se3 is used as a source material. The influence of the S/Se component ratio on the morphology and structural characteristics of Sb2(SxSe1-x)3 thin films is investigated. As demonstrated by the results of X-ray energy dispersive spectroscopy, the formed films of Sb2(SxSe1-x)3 have a components ratio close to the stoichiometry. Besides, Morphological and structural analyses reveal significant differences in the surface morphology of Sb2(SxSe1-x)3 thin film absorbers, indicating that the properties of the films vary as a function of the S/Se composition ratio.
Authors
- М. С. Тиванов (ORCID: https://orcid.org/0000-0002-4243-0813)
- A. N. Olimov
- D. Z. Isakov (ORCID: https://orcid.org/0000-0003-4314-5683)
- O.V. Korolik (ORCID: https://orcid.org/0000-0001-9430-4010)
- Р. Хуррамов (ORCID: https://orcid.org/0009-0008-1038-0138)
- К. M. Kuchkarov (ORCID: https://orcid.org/0000-0002-2238-7205)
- D. S. Bayko (ORCID: https://orcid.org/0000-0001-7278-8501)
- T. M. Razykov (ORCID: https://orcid.org/0000-0001-9062-0577)
- Z. A. Makhmudov
- Aslan Nasirov (ORCID: https://orcid.org/0000-0002-9525-944X)
- M. Pirimmetov
Publication Details
- Journal
- Chalcogenide Letters
- Published
- 2024-11-01
- DOI
- https://doi.org/10.15251/cl.2024.2110.819
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Academy of Sciences Republic of Uzbekistan
- Ministry of Innovative Development of the Republic of Uzbekistan