Zinc sulfide thin films produced by spray pyrolysis: optical and structural characteristics

Zinc sulfide thin films were prepared using the economical spray pyrolysis process. A thin film of exceptional quality with a temperature difference of 300 °C to 400 °C is produced by optimizing variables such as concentration, flow rate, and nozzle to substrate distance. These films' optical characteristics and structure were examined. The deposited thin films displayed a direct and allowed transition, as indicated by the optical transmittance spectra. XRD analysis confirmed that the deposited thin films were polycrystalline with a cubic phase. This film can be used in solar cell applications since the band gap energy fluctuation is high enough, ranging from 3.42 to 3.81 eV.

Authors

Publication Details

Journal
Chalcogenide Letters
Published
2024-11-01
DOI
https://doi.org/10.15251/cl.2024.2110.841
Citations
2
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.42

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article

Zinc sulfide thin films produced by spray pyrolysis: optical and structural characteristics

M. Sudha, M. Revathi, A. B. Madhan
2 citations
Chalcogenide Letters
Chalcogenide Semiconductor Thin Films
0.42
article

Zinc sulfide thin films produced by spray pyrolysis: optical and structural characteristics

M. Sudha, M. Revathi, A. B. Madhan
article en
2 citations

Abstract

Zinc sulfide thin films were prepared using the economical spray pyrolysis process. A thin film of exceptional quality with a temperature difference of 300 °C to 400 °C is produced by optimizing variables such as concentration, flow rate, and nozzle to substrate distance. These films' optical characteristics and structure were examined. The deposited thin films displayed a direct and allowed transition, as indicated by the optical transmittance spectra. XRD analysis confirmed that the deposited thin films were polycrystalline with a cubic phase. This film can be used in solar cell applications since the band gap energy fluctuation is high enough, ranging from 3.42 to 3.81 eV.

Chalcogenide LettersVol. 21(10)
Bharathiar University
Affordable and clean energy
Openalex Percentile: Top 37%
Chalcogenide Semiconductor Thin Films
0.42
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