A distinctive bound exciton line induced by electron-beam irradiation and subsequent annealing of an unintentionally doped GaN layer
Abstract An undefined bound exciton line (UDX) with a photon energy 0.6 meV lower than the Si-donor bound exciton line was observed by photoluminescence in gallium nitride (GaN) layers annealed at 1100 °C after electron beam (EB) irradiation at an energy of 137–2000 keV. The UDX was not observed in samples not subjected to EB irradiation or annealing but was found in a sample annealed after EB irradiation at an energy of 137 keV, where only nitrogen atoms are displaced in GaN. The origin of the UDX was presumably formed by a thermal reaction of defects containing nitrogen-displacement-related defects.
Authors
- Hiroko Iguchi (ORCID: https://orcid.org/0000-0003-2714-4111)
- Masahiro Horita (ORCID: https://orcid.org/0000-0003-0008-6732)
- Keita Kataoka (ORCID: https://orcid.org/0000-0003-4855-4339)
- Tetsu Kachi (ORCID: https://orcid.org/0000-0002-4300-5720)
- Kazuyoshi Tomita (ORCID: https://orcid.org/0000-0002-7919-5116)
- Tetsuo Narita (ORCID: https://orcid.org/0000-0002-0849-360X)
- Jun Suda (ORCID: https://orcid.org/0000-0002-5453-4943)
- Shinji Yamada (ORCID: https://orcid.org/0000-0002-1779-3655)
Institutions
- Nagoya University Hospital (JP)
- Toyota Central Research and Development Laboratories (Japan) (JP)
- Nagoya University (JP)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2024-11-01
- DOI
- https://doi.org/10.35848/1347-4065/ad918a
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of Education, Culture, Sports, Science and Technology