Epitaxial growth of Ge<sub>1−x</sub>Sn<sub>x</sub> thin film with Sn composition of 50% and possibility of Ge–Sn ordered bonding structure formation
Abstract We examined the epitaxial growth of Ge 1− x Sn x thin film with x ∼ 0.50 on GaSb(111) substrate using a low-temperature MBE. X-ray diffraction and Raman scattering spectroscopy analyses revealed that the Ge 1− x Sn x thin film with x ∼ 0.50 with no strain was successfully grown on GaSb(111). Furthermore, in the Raman analysis, a sharper Ge-Sn peak compared to Ge-Ge and Sn-Sn peaks was clearly observed and showed an improved thermal stability than Ge 1− x Sn x with a smaller Sn composition. This suggests that the Ge 1− x Sn x with x ∼ 0.50 would have an ordered Ge–Sn bonding like a zinc blend system, that is significantly different from Si 1− x Ge x case.
Authors
- Osamu Nakatsuka (ORCID: https://orcid.org/0000-0002-5198-0737)
- Masashi Kurosawa (ORCID: https://orcid.org/0000-0001-9151-0820)
- Kaoru Shibata (ORCID: https://orcid.org/0000-0001-9000-7801)
- Shigehisa Shibayama (ORCID: https://orcid.org/0000-0002-5202-3904)
- Mitsuo Sakashita
Institutions
- Nagoya University (JP)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2024-11-01
- DOI
- https://doi.org/10.35848/1882-0786/ad9190
- Citations
- 1
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Japan Science and Technology Corporation
- Japan Society for the Promotion of Science