Impact of post-deposition annealing on SiO<sub>2</sub>/SiC interfaces formed by plasma nitridation of the SiC surface and SiO<sub>2</sub> deposition
Abstract We examined the impact of post-deposition annealing (PDA) on SiO 2 /SiC structures formed by plasma nitridation of the SiC surface followed by sputter deposition of SiO 2 . The interface state density near the conduction band edge of SiC was reduced from about 2 × 10 12 to 1 × 10 11 eV −1 cm −2 as the CO 2 -PDA temperature increased from 1050 °C to 1250 °C. In addition, the sample treated by CO 2 -PDA exhibited substantially higher immunity against positive gate bias stress than the standard NO nitridation. Our findings indicate that defect passivation by CO 2 -PDA plays a crucial role in improving the performance and reliability of SiC MOS devices formed by sputter-SiO 2 deposition.
Authors
- Heiji Watanabe (ORCID: https://orcid.org/0000-0002-7916-3093)
- Hiroki Fujimoto (ORCID: https://orcid.org/0000-0002-8443-6279)
- Takuma Kobayashi (ORCID: https://orcid.org/0000-0002-2755-5079)
Institutions
- The University of Osaka (JP)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2024-11-01
- DOI
- https://doi.org/10.35848/1882-0786/ad918f
- Citations
- 3
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.63
Funders
- Ministry of Education, Culture, Sports, Science and Technology
- Japan Society for the Promotion of Science