Thermal design of a solid-state power amplifier at Q-band

Abstract It is very difficult to cool a new solid-state power amplifier at Q-band, which is composed of some high-power monolithic millimeter-wave integrated circuit chips. Cu/Diamond carriers are used as the heat sinks of the chips, and two layers of heat pipes are sealed in the chassis to reduce the thermal resistance of the amplifier. The thermal design scheme is proved useful by simulating Flotherm and the temperature data from the infrared imager. The study provides an available way for the thermal design of a solid-state power amplifier.

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Publication Details

Journal
Journal of Physics Conference Series
Published
2024-11-01
DOI
https://doi.org/10.1088/1742-6596/2882/1/012006
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
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article

Thermal design of a solid-state power amplifier at Q-band

Fengjiao Hu, Dapeng Liang, Sheng Wang, Jiangtao Liu
Journal of Physics Conference Series
Radio Frequency Integrated Circuit Design
article

Thermal design of a solid-state power amplifier at Q-band

Fengjiao Hu, Dapeng Liang, Sheng Wang, Jiangtao Liu
article en

Abstract

Abstract It is very difficult to cool a new solid-state power amplifier at Q-band, which is composed of some high-power monolithic millimeter-wave integrated circuit chips. Cu/Diamond carriers are used as the heat sinks of the chips, and two layers of heat pipes are sealed in the chassis to reduce the thermal resistance of the amplifier. The thermal design scheme is proved useful by simulating Flotherm and the temperature data from the infrared imager. The study provides an available way for the thermal design of a solid-state power amplifier.

Journal of Physics Conference SeriesVol. 2882(1)
China Academy of Space Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 82%
Radio Frequency Integrated Circuit Design
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