Recent advances in LDO chip research

Abstract. With the rapid development of integrated circuit technology and the wide application of Internet of things devices, the demand for power management chips is increasing. Low-dropout regulators (LDO) play an important role in modern electronic devices. It provides a stable low output voltage while maintaining low power consumption. Recently some progress has been made in the research of LDO chips, focusing on improving power efficiency, reducing static current, and enhancing transient response. The study shows that the static current has been significantly reduced by using the subthreshold MOS tube and dynamic current bias technology. In terms of power supply rejection ratio (PSRR), by improving the circuit design, the PSRR of LDO can be maintained above -80 dB under various conditions. In addition, improvements to the transient response result in significantly optimized overshoot and recovery times of the output voltage, ensuring voltage stability when the load changes rapidly. These advances enable LDO chips to meet the demanding requirements of high-performance and Internet of things device applications. Future challenges include further reducing static current, improving PSRR performance in high-frequency environments, and effectively addressing thermal management issues.

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Publication Details

Journal
Applied and Computational Engineering
Published
2024-11-08
DOI
https://doi.org/10.54254/2755-2721/101/20241053
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
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article

Recent advances in LDO chip research

Jinfeng Lai
Applied and Computational Engineering
Semiconductor materials and devices
article

Recent advances in LDO chip research

Jinfeng Lai
article en

Abstract

Abstract. With the rapid development of integrated circuit technology and the wide application of Internet of things devices, the demand for power management chips is increasing. Low-dropout regulators (LDO) play an important role in modern electronic devices. It provides a stable low output voltage while maintaining low power consumption. Recently some progress has been made in the research of LDO chips, focusing on improving power efficiency, reducing static current, and enhancing transient response. The study shows that the static current has been significantly reduced by using the subthreshold MOS tube and dynamic current bias technology. In terms of power supply rejection ratio (PSRR), by improving the circuit design, the PSRR of LDO can be maintained above -80 dB under various conditions. In addition, improvements to the transient response result in significantly optimized overshoot and recovery times of the output voltage, ensuring voltage stability when the load changes rapidly. These advances enable LDO chips to meet the demanding requirements of high-performance and Internet of things device applications. Future challenges include further reducing static current, improving PSRR performance in high-frequency environments, and effectively addressing thermal management issues.

Applied and Computational EngineeringVol. 101(1)
Beijing University of Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 82%
Semiconductor materials and devices
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