Enhanced performance of a Mg <sub>2</sub> Si/Si heterojunction photodetector grown with the assistance of nanostructures
This graph shows a Mg 2 Si/Si heterojunction photodetector fabricated with the assistance of nanostructures, enabling enhanced optoelectronic performance with a 173–402% improvement in responsivity and a 111–281% improvement in specific detectivity.
Authors
- Jun Gou (ORCID: https://orcid.org/0000-0002-8017-9287)
- Zhiming Wu (ORCID: https://orcid.org/0000-0003-3217-1376)
- Yanshuai Zhang
- G. J. Zhang
- Jun Wang
- Lixin Liu (ORCID: https://orcid.org/0000-0001-6133-4977)
- Hang Yu
- He Yu (ORCID: https://orcid.org/0000-0002-1895-406X)
- Xiutao Yang (ORCID: https://orcid.org/0009-0003-8506-4002)
Institutions
- University of Electronic Science and Technology of China (CN)
- Henan Tianguan Group (China) (CN)
- National Engineering Research Center of Electromagnetic Radiation Control Materials (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2024-11-11
- DOI
- https://doi.org/10.1039/d4tc04029e
- Citations
- 2
- Primary Topic
- Semiconductor materials and interfaces
- Type
- article
- Field-Weighted Citation Impact
- 0.68
Funders
- National Natural Science Foundation of China
- Aeronautical Science Foundation of China
- Natural Science Foundation of Sichuan Province