Derivation of the General Equation of State for a Doped Semiconductor. The Equation is Solved Concerning the Electron Concentration in the Conduction Band for Different Concentrations and Properties of Doping Substances

The paper examines the state of a system consisting of a crystalline semiconductor doped with donor and acceptor impurities. The General Equation of State of the system is derived. Methods are proposed to solve the general equation for the concentration of electrons or holes in a semiconductor. The identity of the General Equations of State of semiconductors and aqueous solutions of electrolytes is discussed. An assumption is made about the practical application of the found relationships.