Electrically Controlled Excitons, Charge Transfer Induced Trions, and Narrowband Emitters in MoSe<sub>2</sub>–WSe<sub>2</sub> Lateral Heterostructure

Controlling excitons and their transport in two-dimensional (2D) transition metal dichalcogenide heterostructures is central to advancing photonics and electronics on-chip integration. We investigate the controlled generation and manipulation of excitons and their complexes in monolayer MoSe<sub>2</sub>-WSe<sub>2</sub> lateral heterostructures (LHSs). Incorporating graphene as a back gate and edge contact in a field-effect transistor geometry, we achieve the precise electrical tuning of exciton complexes and their transfer across interfaces. Photoluminescence and photocurrent maps at 4 K reveal the synergistic effect of the local electric field and interface phenomena in the modulation of excitons, trions, and free carriers. We observe spatial variations in the exciton and trion densities driven by exciton-trion conversion under electrical manipulation. Additionally, we demonstrate controlled narrow-band emissions within the LHS through carrier injection and electrical biasing. Density functional theory calculation reveals significant band modification at the lateral interfaces. This work advances exciton manipulation in LHS and shows promise for next-generation 2D quantum devices.

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Publication Details

Journal
Nano Letters
Published
2024-11-11
DOI
https://doi.org/10.1021/acs.nanolett.4c03464
Citations
9
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.05

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article

Electrically Controlled Excitons, Charge Transfer Induced Trions, and Narrowband Emitters in MoSe2–WSe2 Lateral Heterostructure

Christoph Stampfer, Suman Kumar Chakraborty, Md. Nur Hasan, David Tebbe et al.
9 citations
Nano Letters
2D Materials and Applications
1.05
article

Electrically Controlled Excitons, Charge Transfer Induced Trions, and Narrowband Emitters in MoSe2–WSe2 Lateral Heterostructure

Christoph Stampfer, Suman Kumar Chakraborty, Md. Nur Hasan, David Tebbe, Prasana K. Sahoo, Marvin Metzelaars, Debjani Karmakar, Lutz Waldecker, Gopal K. Pradhan, Bernd Beschoten, Baisali Kundu, Paul Kögerler, Priyanka Mondal
article en
9 citations

Abstract

Controlling excitons and their transport in two-dimensional (2D) transition metal dichalcogenide heterostructures is central to advancing photonics and electronics on-chip integration. We investigate the controlled generation and manipulation of excitons and their complexes in monolayer MoSe<sub>2</sub>-WSe<sub>2</sub> lateral heterostructures (LHSs). Incorporating graphene as a back gate and edge contact in a field-effect transistor geometry, we achieve the precise electrical tuning of exciton complexes and their transfer across interfaces. Photoluminescence and photocurrent maps at 4 K reveal the synergistic effect of the local electric field and interface phenomena in the modulation of excitons, trions, and free carriers. We observe spatial variations in the exciton and trion densities driven by exciton-trion conversion under electrical manipulation. Additionally, we demonstrate controlled narrow-band emissions within the LHS through carrier injection and electrical biasing. Density functional theory calculation reveals significant band modification at the lateral interfaces. This work advances exciton manipulation in LHS and shows promise for next-generation 2D quantum devices.

Nano LettersVol. 24(46)
Uppsala University (SE), Bhabha Atomic Research Centre (IN), Indian Institute of Technology Kharagpur (IN), Homi Bhabha National Institute (IN), KIIT University (IN), RWTH Aachen University (DE)
Department of Science and Technology, Ministry of Science and Technology, India, Deutsche Forschungsgemeinschaft, Bundesministerium für Bildung und Forschung, Indian Institute of Technology Kharagpur, Ministerium für Kultur und Wissenschaft des Landes Nordrhein-Westfalen, Science and Engineering Research Board
Openalex Percentile: Top 20%
2D Materials and Applications
1.05
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