Modulation of GeSe and As <sub>2</sub> Se <sub>3</sub> motifs to optimise GeAsSe OTS performance and its mechanism
Ovonic threshold switching (OTS) selectors are pivotal in the construction of highly integrated 3D crosspoint array volatile storage systems, necessitating materials with superior electrical properties.
Authors
- Yuan Xue (ORCID: https://orcid.org/0000-0002-5518-165X)
- Mingyue Shao (ORCID: https://orcid.org/0000-0002-3783-4880)
- Sannian Song (ORCID: https://orcid.org/0000-0001-7186-4744)
- Y.P. Li
- Yuhao Wang (ORCID: https://orcid.org/0000-0003-0536-7664)
- Haotian Wang (ORCID: https://orcid.org/0000-0002-3552-8978)
- Zhitang Song
Institutions
- Shanghai University (CN)
- Chinese Academy of Sciences (CN)
- ShanghaiTech University (CN)
- Shanghai Institute of Microsystem and Information Technology (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2024-11-11
- DOI
- https://doi.org/10.1039/d4tc03586k
- Citations
- 2
- Primary Topic
- Phase-change materials and chalcogenides
- Type
- article
- Field-Weighted Citation Impact
- 0.23
Funders
- Shanghai Association for Science and Technology
- National Natural Science Foundation of China
- Chinese Academy of Sciences
- National Key Research and Development Program of China