Accurate Layer-Number Determination of Hexagonal Boron Nitride Using Optical Characterization

Precise determination of the layer number (<i>N</i>) of hexagonal boron nitride (hBN) is crucial for its integration with other layered materials in applications such as ferroelectric devices and moiré potential modulation. We present a nondestructive method to accurately identify <i>N</i>, combining optical contrast analysis with second harmonic generation (SHG) measurements. By studying the flakes on 90 nm thick SiO<sub>2</sub>/Si substrates, we demonstrate that red-filtered optical images provide a clear contrast step in <i>N</i> with an uncertainty of ±1 layer, while SHG measurements further reduce the error by distinguishing even and odd layers. We also introduce a real-time detection technique to identify monolayer and few-layer hBN, improving flake identification efficiency. Given the growing interest in twisted hBN interfaces and their integration in van der Waals heterostructures, this method offers a practical approach for future studies.

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Publication Details

Journal
Nano Letters
Published
2024-11-11
DOI
https://doi.org/10.1021/acs.nanolett.4c04241
Citations
2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.23

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article

Accurate Layer-Number Determination of Hexagonal Boron Nitride Using Optical Characterization

Kai Feng, Dong‐Keun Ki, Chengdong Yao, Xiong Wang et al.
2 citations
Nano Letters
2D Materials and Applications
0.23
article

Accurate Layer-Number Determination of Hexagonal Boron Nitride Using Optical Characterization

Kai Feng, Dong‐Keun Ki, Chengdong Yao, Xiong Wang, Hongxia Xue, Lain‐Jong Li, Shuang Qiao, Zhongqi Wang, Tianyu Zhang
article en
2 citations

Abstract

Precise determination of the layer number (<i>N</i>) of hexagonal boron nitride (hBN) is crucial for its integration with other layered materials in applications such as ferroelectric devices and moiré potential modulation. We present a nondestructive method to accurately identify <i>N</i>, combining optical contrast analysis with second harmonic generation (SHG) measurements. By studying the flakes on 90 nm thick SiO<sub>2</sub>/Si substrates, we demonstrate that red-filtered optical images provide a clear contrast step in <i>N</i> with an uncertainty of ±1 layer, while SHG measurements further reduce the error by distinguishing even and odd layers. We also introduce a real-time detection technique to identify monolayer and few-layer hBN, improving flake identification efficiency. Given the growing interest in twisted hBN interfaces and their integration in van der Waals heterostructures, this method offers a practical approach for future studies.

Nano LettersVol. 24(46)
Hong Kong University of Science and Technology (HK), Hebei University (CN), University of Hong Kong (HK)
Research Grants Council, University Grants Committee, National Key Research and Development Program of China
Openalex Percentile: Top 50%
2D Materials and Applications
0.23
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Accurate Layer-Number Determination of Hexagonal Boron Nitride Using Optical Characterization — Kai Feng, Dong‐Keun Ki, et al. · Nano Letters (2024) | TGRS Research Map | TGRS