Write Endurance Enhanced and Large Memory Window of GeSe-Based Selector-Only Memory With Indium Doping Scheme

Chalcogenide-based novel Selector-Only Memory (SOM) has attracted much attention due to its fast-speed performance and manufacturability. However, the lack of endurance, caused by the polarity operation, needs to be improved. Here, we investigate an indium doping scheme for write endurance enhanced and large memory window of GeSe-based SOM. With the evidence of atomic migration, we propose a trade-off relationship between MW and endurance and a relevant model of Se-migration in a restricted range. Based on this model, we demonstrate that less than 5% In-doping can fit the optimization requirements. Besides, the performance of GeSe devices with different In concentrations further confirms the trade-off relationship. Finally, 3% In-doping GeSe SOM devices are fabricated with a large MW (1.3 V), three orders of magnitude improvement of write endurance compared with GeSe devices (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{6}}$ </tex-math></inline-formula>) and excellent read endurance (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{9}}$ </tex-math></inline-formula>). This work helps the endurance optimization of SOM devices and is promising to accelerate its widespread application.