Theoretical Research on a D-Band Traveling Wave Extended Interaction Amplifier
A traveling-wave, extended interaction amplifier is herein investigated for use in millimeter-wave and terahertz amplification sources. By placing engineered extended interaction cavities between the traveling wave structures, higher gain is obtained with a shorter high frequency circuit, compared with conventional traveling wave tubes architectures. The bandwidth of the device is significantly increased relative to extended interaction klystrons. A D-band beam wave interaction circuit of 26 mm long has been designed. Particle-in-cell simulations at 21.5-kV operating voltage, 0.3-A beam current, and 5-mW input power show that the maximum output power reaches 351 W, with a gain of 48.4 dB and 3-dB bandwidth of 1.42 GHz.
Authors
- Xiaotao Xu (ORCID: https://orcid.org/0000-0001-9069-9537)
- Q. Chen (ORCID: https://orcid.org/0000-0002-0692-6993)
- Zhongtao Cui
- Matthew T. Cole (ORCID: https://orcid.org/0000-0001-8631-3259)
- Yifan Zu (ORCID: https://orcid.org/0009-0004-4716-3971)
- Dongrui Chen (ORCID: https://orcid.org/0000-0002-4490-4218)
- Xuesong Yuan (ORCID: https://orcid.org/0000-0002-6371-6191)
- Yan Yang (ORCID: https://orcid.org/0009-0006-7177-1111)
Institutions
- University of Electronic Science and Technology of China (CN)
- University of Bath (GB)
Publication Details
- Journal
- Chinese Journal of Electronics
- Published
- 2024-11-01
- DOI
- https://doi.org/10.23919/cje.2022.00.345
- Citations
- 2
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.42
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China