Enhancing Resonant Second-Harmonic Generation in Bilayer WSe<sub>2</sub> by Layer-Dependent Exciton-Polaron Effect
Two-dimensional (2D) materials serve as exceptional platforms for controlled second-harmonic generation (SHG). Current approaches to SHG control often depend on nonresonant conditions or symmetry breaking via single-gate control. Here, we employ dual-gate bilayer WSe<sub>2</sub> to demonstrate an SHG enhancement concept that leverages strong exciton resonance and a layer-dependent exciton-polaron effect. By selectively localizing injected holes within one layer, we induce exciton-polaron states in the hole-filled layer while maintaining normal exciton states in the charge-neutral layer. The distinct resonant conditions of these layers effectively break interlayer inversion symmetry, thereby promoting resonant SHG. This method achieves a remarkable 40-fold enhancement of SHG at minimal electric field, equivalent to conditions near the dielectric-breakdown threshold but using only ∼3% of the critical breakdown field. Our results highlight SHG sensitivity to carrier density and type, offering a new tool for manipulating SHG and probing quantum states in 2D excitonic systems.
Authors
- Chun Hung Lui (ORCID: https://orcid.org/0000-0002-1470-328X)
- Nathaniel M. Gabor (ORCID: https://orcid.org/0000-0002-0351-2787)
- Takashi Taniguchi (ORCID: https://orcid.org/0000-0002-1467-3105)
- Kenji Watanabe (ORCID: https://orcid.org/0000-0003-3701-8119)
- Tianyi Ouyang
- Soonyoung Cha
Institutions
- University of California, Riverside (US)
- National Institute for Materials Science (JP)
Publication Details
- Journal
- Nano Letters
- Published
- 2024-11-11
- DOI
- https://doi.org/10.1021/acs.nanolett.4c04544
- Citations
- 7
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.82
Funders
- American Chemical Society Petroleum Research Fund
- Japan Society for the Promotion of Science
- Division of Materials Research
- Air Force Office of Scientific Research
- Army Research Office