Micro-discharge in GIS/GIL induced by scratch defect on the surface of insulation pull rods
Abstract The insulation pull rod (IPR) plays a crucial role in gas insulated switchgear (GIS) and gas insulated transmission line (GIL), which must withstand high impulse voltages to cope with frequent switching operations under working conditions. During the manufacturing process, micro-defects may occur on the surface of insulation pull rods, which may cause micro-discharge or even breakdown. It is difficult to carry out experiments to study the microscopic characteristics of the micro-discharge induced by micro-defects on the surface of the insulation pull rod. In order to study the relationship between the micro-discharge and the micro-defects. Firstly, the characterization of the scratch defect based on Micro-CT (micro computed tomography) and white light interference are presented. Secondly, a coaxial DC SF 6 corona discharge model is established to obtain the curve related to the density of charged particles in SF 6 and the electric field. Finally, we combined the reconstruction of the defect model in the first step with the curve obtained in the second step to simulate the micro discharge around the scratch defect, and provided the micro-discharge in pure SF 6 caused by the scratch defect. The phenomenon of micro-discharge induced by the scratch of insulation pull rod is explained. The oscillation phenomenon of internal micro-discharge in scratch defects under high electric field background is discovered.
Authors
- Yujie Zhu (ORCID: https://orcid.org/0000-0002-2378-3787)
- Changyun Li (ORCID: https://orcid.org/0000-0001-6401-715X)
- Feng Zhu
- Chuanyang Li (ORCID: https://orcid.org/0000-0002-3702-2647)
Institutions
- Shandong University of Science and Technology (CN)
- Tsinghua University (CN)
Publication Details
- Journal
- Physica Scripta
- Published
- 2024-11-11
- DOI
- https://doi.org/10.1088/1402-4896/ad911a
- Citations
- 1
- Primary Topic
- Plasma Diagnostics and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.21