Van der Waals magnetic materials for current-induced control toward spintronic applications

Abstract Spintronics, leveraging electron spin for information processing, promises substantial advancements in energy-efficient computing. Van der Waals (vdW) magnetic materials, with their unique-layered structures and exceptional magnetic properties, have emerged as pivotal components in this field. This report explores the current-based control of vdW magnets, focusing on the spin–orbit torque (SOT) mechanism, which is crucial for spintronic applications. Key studies on Fe 3 GaTe 2 /Pt and Fe 3 GaTe 2 /WTe 2 heterostructures are highlighted, demonstrating efficient SOT switching at room temperature. The advantages of vdW magnets for SOT switching, including high spin-torque efficiencies and superior interface quality, are discussed. The report also examines future directions, such as wafer-scale growth techniques, materials design for enhanced Curie temperatures ( T c ), and the development of magneto tunnel junctions using all-vdW materials. These advancements underscore the potential of vdW magnetic materials in developing scalable, high-performance spintronic devices, paving the way for significant breakthroughs in energy-efficient computing. Graphical abstract