Anion‐Tailored EDL Induced Triple‐Layer SEI on High‐Capacity Anodes Enabling Fast‐Charging and Durable Sodium‐Storage

High-capacity electrodes face a great challenge of cycling stability due to particle fragmentation induced conductive network failure and accompanied by sustained electrolyte decomposition for repeatedly build solid electrolyte interphase (SEI). Herein, Se-solubility induced Se<sub>x</sub> <sup>2-</sup> as self-adjustment electrolyte additive to regulate electric double layer (EDL) for constructing novel triple-layer SEI (inner layer: Se; mediate layer: inorganic; outer layer: organic) on high-capacity FeS<sub>2</sub> anode as an example for achieving stable and fast sodium storage. In detail, Se<sub>x</sub> <sup>2-</sup> in situ generated at 1.30 V (vs. Na<sup>+</sup>/Na) and was preferentially adsorbed onto EDL of anode, then converted to Se<sup>0</sup> as inner layer of SEI. In addition, the Se<sub>x</sub> <sup>2-</sup> causes anion-enhanced Na<sup>+</sup> solvation structure could produce more inorganic (Se<sup>0</sup>, NaF) and less organic SEI components. The unique triple-layer SEI with layer-by-layer dense structure alleviate the excessive electrolyte consumption with less gas evolution. As a result, the anode delivered long-lifespan at 10 A g<sup>-1</sup> (383.7 mAh g<sup>-1</sup>, 6000 cycles, 93.1 %, 5 min/cycle). The Se-induced triple-layer SEI could be also be formed on high-capacity SnS<sub>2</sub> anode. This work provides a novel SEI model by anion-tailored EDL towards stable sodium-storage of high-capacity anode for fast-charging.

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Publication Details

Journal
Angewandte Chemie International Edition
Published
2024-11-11
DOI
https://doi.org/10.1002/anie.202419490
Citations
27
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
5.63

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article

Anion‐Tailored EDL Induced Triple‐Layer SEI on High‐Capacity Anodes Enabling Fast‐Charging and Durable Sodium‐Storage

Changdong Qin, Yifei Yuan, Jun Luo, Kaiwei Yang et al.
27 citations
Angewandte Chemie International Edition
Semiconductor materials and devices
5.63
article

Anion‐Tailored EDL Induced Triple‐Layer SEI on High‐Capacity Anodes Enabling Fast‐Charging and Durable Sodium‐Storage

Changdong Qin, Yifei Yuan, Jun Luo, Kaiwei Yang, Yuliang Cao, Xixue Zhang, Pengfei Yan, Zhengkun Xie, Jingjing Gai, Weihua Chen, Jun Biao Lu, Chengbin Peng, Yang Ding
article en
27 citations

Abstract

High-capacity electrodes face a great challenge of cycling stability due to particle fragmentation induced conductive network failure and accompanied by sustained electrolyte decomposition for repeatedly build solid electrolyte interphase (SEI). Herein, Se-solubility induced Se<sub>x</sub> <sup>2-</sup> as self-adjustment electrolyte additive to regulate electric double layer (EDL) for constructing novel triple-layer SEI (inner layer: Se; mediate layer: inorganic; outer layer: organic) on high-capacity FeS<sub>2</sub> anode as an example for achieving stable and fast sodium storage. In detail, Se<sub>x</sub> <sup>2-</sup> in situ generated at 1.30 V (vs. Na<sup>+</sup>/Na) and was preferentially adsorbed onto EDL of anode, then converted to Se<sup>0</sup> as inner layer of SEI. In addition, the Se<sub>x</sub> <sup>2-</sup> causes anion-enhanced Na<sup>+</sup> solvation structure could produce more inorganic (Se<sup>0</sup>, NaF) and less organic SEI components. The unique triple-layer SEI with layer-by-layer dense structure alleviate the excessive electrolyte consumption with less gas evolution. As a result, the anode delivered long-lifespan at 10 A g<sup>-1</sup> (383.7 mAh g<sup>-1</sup>, 6000 cycles, 93.1 %, 5 min/cycle). The Se-induced triple-layer SEI could be also be formed on high-capacity SnS<sub>2</sub> anode. This work provides a novel SEI model by anion-tailored EDL towards stable sodium-storage of high-capacity anode for fast-charging.

Angewandte Chemie International EditionVol. 64(7)
Wenzhou University (CN), Wuhan University (CN), Beijing University of Technology (CN), Zhengzhou University (CN), Zhejiang University (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 3%
Semiconductor materials and devices
5.63
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