GaN/CuI heterostructure ultraviolet photovoltaic detector for low-power optical communication

In this work, a planar structured GaN/CuI heterojunction ultraviolet photodetector (UVPD) with a self-powered manner was constructed by the spin-coating method. Both UVA and UVC waveband lights were precisely detected by this designed GaN/CuI PD. Irradiated upon 365 nm UVA light, our PD device performed decent self-powered photoresponse properties with a photo-to-dark current ratio (PDCR) of 1.3 × 10<sup>3</sup>, a responsivity of 228 mA/W, and a specific detectivity of 4.3 × 10<sup>13</sup> Jones at zero bias. There was barely degeneration in photocurrent during continuous reliability testing, even with the device being placed in air for five months without package. Severed as an optical signal receiver, the GaN/CuI heterojunction UVPD decoded a binary message of "GOOD" in a homemade optical communication system. These results indicated a great potential application of the self-powered GaN/CuI UVPD in energy conservation wireless communications.

Authors

Publication Details

Journal
Optics Letters
Published
2024-11-11
DOI
https://doi.org/10.1364/ol.538422
Citations
4
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.24

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

GaN/CuI heterostructure ultraviolet photovoltaic detector for low-power optical communication

Xueqiang Ji, Jiaqi Lu, Weihua Tang, Shan Li et al.
4 citations
Optics Letters
GaN-based semiconductor devices and materials
1.24
article

GaN/CuI heterostructure ultraviolet photovoltaic detector for low-power optical communication

Xueqiang Ji, Jiaqi Lu, Weihua Tang, Shan Li, Xingxiang Zhou, S Yin, Ruru Gu, Yufeng Guo
article en
4 citations

Abstract

In this work, a planar structured GaN/CuI heterojunction ultraviolet photodetector (UVPD) with a self-powered manner was constructed by the spin-coating method. Both UVA and UVC waveband lights were precisely detected by this designed GaN/CuI PD. Irradiated upon 365 nm UVA light, our PD device performed decent self-powered photoresponse properties with a photo-to-dark current ratio (PDCR) of 1.3 × 10<sup>3</sup>, a responsivity of 228 mA/W, and a specific detectivity of 4.3 × 10<sup>13</sup> Jones at zero bias. There was barely degeneration in photocurrent during continuous reliability testing, even with the device being placed in air for five months without package. Severed as an optical signal receiver, the GaN/CuI heterojunction UVPD decoded a binary message of "GOOD" in a homemade optical communication system. These results indicated a great potential application of the self-powered GaN/CuI UVPD in energy conservation wireless communications.

Optics LettersVol. 50(1)
National Natural Science Foundation of China, Natural Science Foundation of Jiangsu Province, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 21%
GaN-based semiconductor devices and materials
1.24
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.