DC characteristics of a dynamic vision sensor's photoreceptor circuit evaluated for event-based sensing in the mid-wave infrared

Forthcoming infrared event-based sensors will have utility in the space-based surveillance domain where they could potentially perform traditional sensing and tracking functions with significantly enhanced temporal resolution and reduced downstream datalink demands and power consumption. As a first step toward extending event-based sensing technology into the mid-wave infrared, a DC simulation of the conventional event-based sensor unit cell's photoreceptor circuit is performed, and the results are compared with measurements of a printed circuit board implementation of the same circuit to assess what design freedom is available to interface the photoreceptor with a mid-wave infrared photodetector. Detailed analysis of the circuit and measurements provides insight into which fundamental properties of the transistors drive the photoreceptor's dynamic range and demonstrates several characteristics that are relevant to mid-wave infrared sensing. These characteristics include the capability to produce a stable, low voltage bias on the infrared photodetector to maximize sensitivity, and that operating the circuit below room temperature increases the photoreceptor's dynamic range. Measurements show that even the simplest implementation of the photoreceptor circuit exhibits a dynamic range of logarithmic compression of 150 dB at room temperature. However, the dynamic range is ultimately limited by the mid-wave infrared photodetector's dark current activation energy, which is significantly lower than the threshold voltage (energy) of the photoreceptor's feedback transistor and, thus, there is an incentive for the photodetector's dark current to be diffusion-limited.