Indium–Gallium–Zinc Oxide: Influence of the Complexing Agent on the Structure
The In2O3–Ga2O3–ZnO ternary oxide is prospective for electronics applications. Promising methods of fabricating In2O3–Ga2O3–ZnO based transistors require a technique for the preparation of X-ray pure powders. Data on the influence of the studied organic complexing agent on the morphology of obtained powders are reported. It is shown that ethylene glycol is more preferable to use than citric acid since the powders prepared in the first case contain no admixture phases.
Authors
- S.A. Gudkova (ORCID: https://orcid.org/0000-0002-3028-947X)
- Д.А. Винник (ORCID: https://orcid.org/0000-0002-5190-9834)
- I.A. Solizoda
- С. А. Созыкин (ORCID: https://orcid.org/0000-0001-7621-3502)
- G. M. Zirnik (ORCID: https://orcid.org/0009-0008-4546-1368)
- A.S. Chernukha (ORCID: https://orcid.org/0000-0002-1272-1628)
Institutions
- South Ural State University (RU)
- Moscow Institute of Physics and Technology (RU)
- Tajik National University (TJ)
- St Petersburg University (RU)
Publication Details
- Journal
- Journal of Structural Chemistry
- Published
- 2024-10-01
- DOI
- https://doi.org/10.1134/s0022476624100111
- Citations
- 6
- Primary Topic
- Transition Metal Oxide Nanomaterials
- Type
- article
- Field-Weighted Citation Impact
- 1.01