Efficient Near‐Infrared to Blue Photon Upconversion by Ultrafast Spin Flip and Triplet Energy Transfer at Organic/2D Semiconductor Interface

Solid state photon upconversion by triplet-triplet annihilation (TTA), particularly near-infrared (NIR)-to-blue upconversion, holds instant promise for enhancing optoelectronic and photochemical applications. Despite extensive studies, NIR-to-blue upconversion has remained particularly challenging and elusive due to inherent multiple energy-downhill processes in TTA upconversion. In this study, using atomically thin two dimensional (2D) monolayer semiconductor as a triplet sensitizer, we demonstrate an efficient and robust solid-state NIR-to-blue photon upconversion system. The ultrathin and flexible organic/2D bilayer heterostructure exhibits a NIR-to-blue upconversion with high quantum yield (Φ_UC=1.2 %, out of 50 %), low threshold power density (I_th=110 mW/cm²) and a record-high apparent anti-Stokes shift of 1.12 eV. Further spin- and time-resolved spectroscopy reveals an ultrafast (<500 fs) electron spin flip to triplet-like excitons in semiconductor sensitizer and subsequent picosecond (~6×10¹⁰ s^-1) interfacial Dexter energy transfer to annihilator molecules. The triplet energy transfer rate and efficiency depend strongly on driving force, exhibiting Marcus normal region behavior. This work demonstrates 2D monolayer semiconductor as a superior ultrathin light harvesting and triplet sensitization layer and reveals the key knob to overcome the compromise between upconversion efficiency and energy loss, offering a viable pathway to efficient solid state NIR-to-blue photon upconversion and implementation.