Group‐VA Doped ZnO Injection Layer for Bright and Efficient Perovskite Light‐Emitting Diodes

Abstract Heteroatom doping of the ZnO electron injection layer (EIL) is widely applied to the fabrication of high‐performance quantum‐dot and perovskite light‐emitting diodes (PeLEDs), while group‐VA atomic dopant is rarely studied. Here, VA bismuth (Bi) with strong metallicity is screened as a substitution dopant to regulate the colloid size, surface terminal, and defect density of the ZnO precursor. The as‐fabricated Bi‐doped ZnO (ZnBiO) EIL shows enhanced conductivity, passivated trap states, more n‐type nature, and appropriate band alignment with FAPbI 3 (FA: formamidinium), contributing to smooth injection paths with minimal transport losses. Promoted by inhibited hydroxyl terminations of ZnBiO, the FAPbI 3 crystals grown into flat nanocylinder domains with higher crystallinity and area‐thickness ratio, leading to a champion PeLED efficiency of 22.3%, a high near‐infrared radiance of 684 W sr −1 m −2 , and nearly an order of magnitude extended operational stability, which shows great promise of ZnBiO as the optimal EIL for various LED application scenarios beyond classical ZnMgO.

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Publication Details

Journal
Advanced Functional Materials
Published
2024-11-10
DOI
https://doi.org/10.1002/adfm.202413517
Citations
9
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
1.88

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article

Group‐VA Doped ZnO Injection Layer for Bright and Efficient Perovskite Light‐Emitting Diodes

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9 citations
Advanced Functional Materials
Perovskite Materials and Applications
1.88
article

Group‐VA Doped ZnO Injection Layer for Bright and Efficient Perovskite Light‐Emitting Diodes

An Hu, Xiaoyu Yang, Qixuan Zhong, Lichen Zhao, Xinqiang Wang, Shunde Li, Jiang Wu, Changjun Lu, Yongqiang Ji, Hong Li, Yu Chen, Le Li, Rui Zhu, Li Ma, Qiuyang Li, Yuzhuo Zhang, Yanju Wang, H. Chen, Zhangyuchang Lu
article en
9 citations

Abstract

Abstract Heteroatom doping of the ZnO electron injection layer (EIL) is widely applied to the fabrication of high‐performance quantum‐dot and perovskite light‐emitting diodes (PeLEDs), while group‐VA atomic dopant is rarely studied. Here, VA bismuth (Bi) with strong metallicity is screened as a substitution dopant to regulate the colloid size, surface terminal, and defect density of the ZnO precursor. The as‐fabricated Bi‐doped ZnO (ZnBiO) EIL shows enhanced conductivity, passivated trap states, more n‐type nature, and appropriate band alignment with FAPbI 3 (FA: formamidinium), contributing to smooth injection paths with minimal transport losses. Promoted by inhibited hydroxyl terminations of ZnBiO, the FAPbI 3 crystals grown into flat nanocylinder domains with higher crystallinity and area‐thickness ratio, leading to a champion PeLED efficiency of 22.3%, a high near‐infrared radiance of 684 W sr −1 m −2 , and nearly an order of magnitude extended operational stability, which shows great promise of ZnBiO as the optimal EIL for various LED application scenarios beyond classical ZnMgO.

Advanced Functional MaterialsVol. 35(3)
Nanyang Technological University (SG), Shanxi University (CN), Shaanxi University of Technology (CN), Chinese Academy of Sciences (CN), Peking University (CN), Henan Academy of Sciences (CN), Collaborative Innovation Center of Quantum Matter (CN), Institute of High Energy Physics (CN), Institute of Physics (CN), Beijing University of Chemical Technology (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation, Natural Science Foundation of Beijing Municipality, Beijing Nova Program, National Key Research and Development Program of China
Openalex Percentile: Top 14%
Perovskite Materials and Applications
1.88
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