Sustainable Semiconducting BaS₃:Sb₂S₃:LaS₂ Filiform Rods: Revolutionizing Energy Storage and Production With Mixed Metal Chalcogenides

ABSTRACT During this period of rising energy demand, scientific circles and energy stakeholders have paid close attention to electrochemical energy storage. In order to improve the functioning of charge storage systems, the BaS 3 :Sb 2 S 3 :LaS 2 tri‐chalcogenide is produced with a diethyldithiocarbamate ligand as a chelator. The BaS 3 :Sb 2 S 3 :LaS 2 semiconductor, which was produced sustainably, has a 3.65‐eV energy band gap and high photoactivity due to light absorption. Having heterogeneous crystalline states and a mean crystallite dimension of 17.58 nm, the resulting chalcogenide had excellent crystallinity. In addition, infrared spectroscopy was utilized to analyze metallic sulfide associations, and the results showed that they ranged from 550 to 951 cm −1 . This chalcogenide expressed filiform rod‐like morphology with an abundance of the sites available for electrochemical activity. The electrochemical performance of BaS 3 :Sb 2 S 3 :LaS 2 was assessed with a conventional three‐electrode configuration. BaS 3 :Sb 2 S 3 :LaS 2 has been shown to have been a superior substance for electrodes for storing electricity, with a power density of 7910.18 W kg −1 with a particular capacitance of as high as 961.39 F g −1 . The exceptional electrochemical performance was supported with a comparable series resistance (R s ) at 0.71 Ω. Following electrocatalysis, the electrode exhibited an OER overpotential and an equivalent Tafel slope of approximately 416 mV and 126 mV/dec, respectively. Conversely, the Tafel slope and overpotential of the HER activity were 117 mV/dec and 233 mV, respectively.