Robust Light Detection from Ultraviolet to Near‐Infrared with ZnGa<sub>2</sub>O<sub>4</sub>/<i>p</i>‐Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions (Adv. Electron. Mater. 11/2024)
Robust Light Detection with Broadband ZnGa2O4/p-Si Heterojunction Photodiode for Physically Unclonable Functions In article number 2400649, Hocheon Yoo and co-workers demonstrate broadband detection performance by applying a UV-responsive ZnGa2O4 film with a low refractive index on p-Si. The device exhibited stability in various environments, benefiting from the chemical robustness of ZnGa2O4. By introducing different self-assembled monolayers to induce irregular doping, the research team enabled multi-key generation through a combination of voltage and wavelength.
Authors
- Wonjun Shin (ORCID: https://orcid.org/0000-0001-9122-2458)
- Byung Chul Jang (ORCID: https://orcid.org/0000-0002-2254-7918)
- Wangmyung Choi
- Jaehyun Hur (ORCID: https://orcid.org/0000-0003-1604-6655)
- Yeongkwon Kim
- Seungme Kang
- Hocheon Yoo (ORCID: https://orcid.org/0000-0003-0772-3327)
- Young‐Joon Kim (ORCID: https://orcid.org/0000-0003-3511-3438)
- Yeong Jae Kim (ORCID: https://orcid.org/0000-0002-0870-9044)
- Youngwoo Yoo (ORCID: https://orcid.org/0009-0002-3084-2631)
Institutions
- Gachon University (KR)
- Kyungpook National University (KR)
- Korea Institute of Ceramic Engineering and Technology (KR)
- Sungkyunkwan University (KR)
Publication Details
- Journal
- Advanced Electronic Materials
- Published
- 2024-11-01
- DOI
- https://doi.org/10.1002/aelm.202470035
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.00