A Robust Low‐Power Power‐On‐Reset Circuit With Dual Threshold Method

ABSTRACT In this paper, a robust low‐power power‐on‐reset (POR) circuit with dual threshold method is proposed. The current‐based circuit exhibits good robustness with respect to process, voltage, temperature, and supply ramp variations. In contrast to conventional delay‐based pulse generation approaches, a dual threshold method is introduced to generate POR and brown‐out‐reset (BOR) pulse signals, resulting in ultralow quiescent current and a compact area. Implemented in the 55‐nm CMOS process, the proposed circuit achieves an accurate trigger‐point voltage with a temperature coefficient of 90.4 ppm/°C and a deviation to the ramp time of 2.9% for a range from 100 μs to 1 s. Furthermore, the quiescent current and active area are 0.3 nA and 4834 μm 2 , respectively, making it particularly suitable for energy harvesting systems.

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Publication Details

Journal
International Journal of Circuit Theory and Applications
Published
2024-11-07
DOI
https://doi.org/10.1002/cta.4349
Primary Topic
Energy Harvesting in Wireless Networks
Type
article
Field-Weighted Citation Impact
0.00

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article

A Robust Low‐Power Power‐On‐Reset Circuit With Dual Threshold Method

Luchang He, Qingyu Wu, Houpeng Chen, Chenchen Xie et al.
International Journal of Circuit Theory and Applications
Energy Harvesting in Wireless Networks
article

A Robust Low‐Power Power‐On‐Reset Circuit With Dual Threshold Method

Luchang He, Qingyu Wu, Houpeng Chen, Chenchen Xie, Zhitang Song, Liping Xu, Xi Li
article en

Abstract

ABSTRACT In this paper, a robust low‐power power‐on‐reset (POR) circuit with dual threshold method is proposed. The current‐based circuit exhibits good robustness with respect to process, voltage, temperature, and supply ramp variations. In contrast to conventional delay‐based pulse generation approaches, a dual threshold method is introduced to generate POR and brown‐out‐reset (BOR) pulse signals, resulting in ultralow quiescent current and a compact area. Implemented in the 55‐nm CMOS process, the proposed circuit achieves an accurate trigger‐point voltage with a temperature coefficient of 90.4 ppm/°C and a deviation to the ramp time of 2.9% for a range from 100 μs to 1 s. Furthermore, the quiescent current and active area are 0.3 nA and 4834 μm 2 , respectively, making it particularly suitable for energy harvesting systems.

International Journal of Circuit Theory and ApplicationsVol. 53(7)
University of Science and Technology of China (CN), Chinese Academy of Sciences (CN), Shanghai Innovative Research Center of Traditional Chinese Medicine (CN), Shanghai Institute of Microsystem and Information Technology (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 82%
Energy Harvesting in Wireless Networks
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