Phosphorene junctions as a platform for spin-selective quantum dots in next-generation devices

The impact of vacancies on spin-resolved electronic properties of quantum dots (QDs) in phosphorene-based junctions is investigated numerically. Regardless of the crystal orientation, a phosphorene nanoribbon containing a monovacancy is found to exhibit a topological quasi-flatband that emerges within the bandgap. The electronic properties of QDs, including spatial confinement and energy level distribution, can be strongly tuned by controlling the topological structure of the QDs and by applying electric fields. Additionally, these QDs exhibit remarkable spin-selective properties under a ferromagnetic exchange field, enabling the manipulation of QD features. This opens up the potential for novel applications such as quantum computing, magnetic sensing, spin-based light emission.