Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na‐Flux Method and Enlargement of the Substrate Surpassing 6 Inches
This cover image, referring to article number 2400106 by Masayuki Imanishi, Yusuke Mori, and co-workers, shows the photograph of a 161-mm diameter GaN wafer hollowed from a hexagonal GaN crystal with an 8-inch diagonal length. The wafer was grown by the Toyoda Gosei group with the Na-flux method on a substrate featuring numerous dots of GaN crystals selectively grown on sapphire, known as a multi-point seed (MPS) substrate, invented at Osaka University. Characteristics of vertical transistors on the GaN wafer, fabricated by the Panasonic group, are also described in this article.
Authors
- Kanako Okumura
- Yusuke Mori (ORCID: https://orcid.org/0000-0003-2952-7458)
- Yoshio Okayama (ORCID: https://orcid.org/0009-0005-3691-3711)
- Naohiro Tsurumi
- Tomio Yamashita
- Miki Moriyama
- Hiroshi Ohno (ORCID: https://orcid.org/0000-0002-8267-6156)
- Keisuke Kakinouchi
- Shigeyoshi Usami (ORCID: https://orcid.org/0000-0002-9710-1718)
- Kosuke Nakamura
- Masayuki Imanishi (ORCID: https://orcid.org/0000-0001-9395-1750)
- Taku Fujimori
- Satoshi Tamura (ORCID: https://orcid.org/0000-0001-6916-4618)
- Seiji Nagai
- Yohei Otoki
- Kosuke Murakami
Institutions
- Panasonic (Japan) (JP)
- Toyoda Gosei (Japan) (JP)
- Nagoya University (JP)
- The University of Osaka (JP)
Publication Details
- Journal
- physica status solidi (RRL) - Rapid Research Letters
- Published
- 2024-11-01
- DOI
- https://doi.org/10.1002/pssr.202470027
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.62