Epitaxial AlBN/β‐Nb<sub>2</sub>N Ferroelectric/Superconductor Heterostructures
In article number 2400157, Chandrashekhar Savant and co-workers report the first demonstration of all-epitaxial, rotationally-aligned ferroelectric/superconductor AlBN/β-Nb2N nitride heterostructures with sharp, abrupt heterojunctions in which the AlBN is ferroelectric with polarization along [0001], and β-Nb2N with 300 K metallic resistivity of 40 μΩ cm becomes superconducting below TC ~ 0.5 K. The B content in AlBN is controlled by varying molecular-beam-epitaxy growth parameters, and its effect on structural lattice-parameters is reported. The findings open avenues for novel electronic and quantum devices with ultrawide bandgap, polar, ferroelectric semiconductors, metallic and superconducting nitride materials.
Authors
- David J. Smith (ORCID: https://orcid.org/0000-0002-8810-4386)
- Kazuki Nomoto
- Debdeep Jena (ORCID: https://orcid.org/0000-0002-4076-4625)
- Thai‐Son Nguyen (ORCID: https://orcid.org/0000-0002-1193-834X)
- Anand Ithepalli (ORCID: https://orcid.org/0000-0001-9141-8776)
- Joongwon Lee (ORCID: https://orcid.org/0000-0002-7097-1203)
- Farhan Rana (ORCID: https://orcid.org/0000-0002-7870-9891)
- Chandrashekhar Savant (ORCID: https://orcid.org/0000-0001-7174-1103)
- Huili Grace Xing (ORCID: https://orcid.org/0000-0002-2709-3839)
- Yu‐Hsin Chen (ORCID: https://orcid.org/0009-0003-1408-9210)
- Saurabh Vishwakarma (ORCID: https://orcid.org/0000-0003-3130-1984)
Institutions
- Cornell University (US)
- Arizona State University (US)
Publication Details
- Journal
- physica status solidi (RRL) - Rapid Research Letters
- Published
- 2024-11-01
- DOI
- https://doi.org/10.1002/pssr.202470026
- Primary Topic
- Metal and Thin Film Mechanics
- Type
- article
- Field-Weighted Citation Impact
- 0.00