Monolithically Integrated Bidirectional Gate ESD Protection Scheme of p-GaN Power HEMT by Dual-Gate Device Technology
This letter proposes a monolithically integrated bidirectional gate electrostatic discharge protection scheme for p-GaN power high-electron-mobility transistors (HEMTs), in which a dual-gate HEMT is designed as the discharging transistor. With this protection scheme, the forward/reverse transmission line pulsing failure current is enhanced from 0.156 A/0.08 A to 1.36 A/5.26 A, almost without sacrificing performances of the p-GaN power HEMT. Thanks to the bidirectional switching characteristics of the dual-gate device by sharing the drift region, only one discharging transistor is required in the scheme; as a result, the area of this protection scheme can be effectively saved by 40.8% compared to state-of-the-art scheme with the same protection capability.
Authors
- Jie Ma (ORCID: https://orcid.org/0009-0005-6816-5420)
- Jiaxing Wei (ORCID: https://orcid.org/0000-0002-9896-3360)
- Ran Ye (ORCID: https://orcid.org/0000-0003-3211-8866)
- Yanfeng Ma (ORCID: https://orcid.org/0009-0004-9110-8566)
- Sheng Li (ORCID: https://orcid.org/0000-0003-4729-9460)
- Long Zhang (ORCID: https://orcid.org/0000-0003-0254-6085)
- Chi Zhang (ORCID: https://orcid.org/0000-0002-7511-805X)
- Siyang Liu (ORCID: https://orcid.org/0000-0001-6498-9901)
- Mingfei Li (ORCID: https://orcid.org/0000-0003-4040-3392)
- Weifeng Sun (ORCID: https://orcid.org/0000-0002-3289-8877)
- Weihao Lu (ORCID: https://orcid.org/0009-0002-8135-4865)
- Lixi Wang (ORCID: https://orcid.org/0000-0003-4481-1924)
Institutions
- WuXi AppTec (China) (CN)
- Southeast University (CN)
- United Microelectronics (United States) (US)
Publication Details
- Journal
- IEEE Transactions on Power Electronics
- Published
- 2024-11-08
- DOI
- https://doi.org/10.1109/tpel.2024.3494833
- Citations
- 8
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 2.49