High-power 808nm VCSEL arrays for Nd:YAG pumping
High power large-scale single junction 808nm VCSEL arrays were fabricated at a chip size of 5.1mm×6mm with regular 100µm thickness substrate and packaged on commercial AlN submounts. The CW optical power was tested up to 100W from a single chip with maximum PCE of 44% and slope efficiency of 1.2W/A. The QCW optical power was tested up to 270W from a single chip with maximum PCE of 50% and slope efficiency of 1.35W/A. This is one of the best performances for high power VCSEL chips for commercial delivery. Side-pumped Nd:YAG laser was designed with these VCSEL chips and experiment was proceeded. High optical-to-optical pumping efficiency of 45% was calculated and the implied Nd:YAG stored energy was up to joules level. These experiments showed great potential for the high power VCSEL chips for Nd:YAG laser pumping and also offered great possibility for volume production and commercial delivery in the near future.
Authors
- Chen Liang-hui
- Y. G. Wang (ORCID: https://orcid.org/0009-0003-8054-5309)
- Yang Li (ORCID: https://orcid.org/0000-0001-7242-4687)
- Chongxian Yuan
- Chuanchuan Li (ORCID: https://orcid.org/0009-0004-5938-3760)
- Xin Wei
Institutions
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Published
- 2024-11-08
- DOI
- https://doi.org/10.1117/12.3054213
- Citations
- 1
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21