Photoelectric characteristics of mid-infrared nBn photodetector based on InAs/InAsSb superlattice
The InAs/InAsSb nBn structure detector without Ga (GA-free) has fewer internal defects, and the barrier blocks majority carrier while allowing the normal transport of photogenerated carriers. The unique structure can effectively suppress the generation-composite current generated by SRH, and achieve low dark current at high operating temperature. In this paper, a mid-infrared Ga-free nBn T2SL detector is investigated. The device exhibited 7.43x10<sup>-6</sup> A/cm<sup>2</sup> under 0.5 V bias at 127 K. At 120K, the detector achieves quantum efficiency values of 56%, exhibits excellent photoelectric performance.
Authors
- Ruimeng Zhang (ORCID: https://orcid.org/0009-0004-6417-914X)
- Ruiqing Chai
- Shengwen Xie (ORCID: https://orcid.org/0000-0002-0417-5807)
- Jiushuang Zhang
- Qiyang Sun (ORCID: https://orcid.org/0000-0002-5286-5562)
- Ruimin Chen (ORCID: https://orcid.org/0000-0002-5338-359X)
- Lili Xie (ORCID: https://orcid.org/0009-0003-4173-9741)
Publication Details
- Published
- 2024-11-08
- DOI
- https://doi.org/10.1117/12.3038953
- Citations
- 1
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.21