Frequency-modulated continuous-wave laser source based on four-wave mixing process in a silicon integrated waveguide doped with reverse-biased P-i-N junction
In this paper, we propose and demonstrate a Frequency Modulated Continuous Wave (FMCW) laser source realized through sideband modulation and four-wave mixing (FWM). A silicon waveguide, featuring a reverse-biased P-i-N junction, is designed to excite FWM process. The FWM process in silicon waveguide expand threefold frequency sweeping span to 6 GHz, thereby enhancing spatial resolution to 2.5 cm. The original tuning range of 2 GHz and tuning rate of 0.2 GHz/s is multiplied by three times to 6 GHz and 0.6 GHz/μs respectively. The frequency-modulated light source exhibits excellent linearity, low noise, narrow linewidth, and fast tuning rates, which are critical attributes for modern electrical systems.
Authors
- Kunpeng Zhai (ORCID: https://orcid.org/0000-0002-2171-5529)
- Xiaonan Chen
- Keqi Cao
- Hang Yu (ORCID: https://orcid.org/0000-0002-0825-3016)
- Xu Li (ORCID: https://orcid.org/0000-0002-0377-2925)
- Yu Liu (ORCID: https://orcid.org/0000-0002-6752-957X)
- Ming Li (ORCID: https://orcid.org/0000-0002-0145-486X)
- Xinyan Zhang (ORCID: https://orcid.org/0009-0006-7805-2048)
- Jinhua Bai
- Ninghua Zhu
- Haiqing Yuan
- Jia Chen
Institutions
- Nankai University (CN)
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Published
- 2024-11-08
- DOI
- https://doi.org/10.1117/12.3034263
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00