Electrochemical Reduction of Graphene Oxide on Flexible Interdigitated Electrodes and Its Application as Strain Sensors

This study presents the electrochemical reduction of graphene oxide (GO) to reduced graphene oxide (rGO) directly onto flexible interdigitated gold electrodes and its application as a strain sensor. GO reduction is achieved using cyclic voltammetry (CV). Remarkably, only a single CV cycle transformed GO into rGO to obtain low‐resistance (≈100 Ω) devices. The reduction of GO is confirmed using Raman spectroscopy and electrical measurements. rGO on flexible interdigitated gold electrodes exhibits graphene‐like characteristics when used as electrolyte‐gated field‐effect transistors. The fabricated devices display a gauge factor (GF) of ≈3.7 in the 0–794 με range. This value represents a substantial improvement, ≈60% higher than traditional metallic strain sensors, which have a GF of ≈2.1. Most importantly, the rGO strain sensor exhibits fast response (1.1 s) and recovery (0.92 s) times. The rGO sensor is mounted on a clamp with an adjustable diameter, which reveals exceptional flexibility and bendability without damage or degradation. These results highlight the potential of rGO for advancing strain‐sensing applications, offering promising opportunities for the future of this technology.