Topological material in the III–V family: Heteroepitaxial InBi on InAs

<a:math xmlns:a="http://www.w3.org/1998/Math/MathML"><a:mrow><a:mi>InBi</a:mi><a:mo>(</a:mo><a:mn>0</a:mn><a:mspace width="0.16em"/><a:mn>0</a:mn><a:mspace width="0.16em"/><a:mn>1</a:mn><a:mo>)</a:mo></a:mrow></a:math> is formed epitaxially on <d:math xmlns:d="http://www.w3.org/1998/Math/MathML"><d:mrow><d:mi>InAs</d:mi><d:mo>(</d:mo><d:mn>1</d:mn><d:mspace width="0.16em"/><d:mn>1</d:mn><d:mspace width="0.16em"/><d:mn>1</d:mn><d:mo>)</d:mo></d:mrow></d:math>-A by depositing Bi onto an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the <g:math xmlns:g="http://www.w3.org/1998/Math/MathML"><g:mover><g:mi mathvariant="normal">M</g:mi><g:mo>¯</g:mo></g:mover></g:math> high symmetry point. This demonstrates a heteroepitaxial system entirely in the III–V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III–V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of <i:math xmlns:i="http://www.w3.org/1998/Math/MathML"><i:mrow><i:mi>InBi</i:mi><i:mo>(</i:mo><i:mn>0</i:mn><i:mspace width="0.16em"/><i:mn>0</i:mn><i:mspace width="0.16em"/><i:mn>1</i:mn><i:mo>)</i:mo></i:mrow></i:math> terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the <l:math xmlns:l="http://www.w3.org/1998/Math/MathML"><l:mrow><l:mi>InBi</l:mi><l:mo>(</l:mo><l:mn>0</l:mn><l:mspace width="0.16em"/><l:mn>0</l:mn><l:mspace width="0.16em"/><l:mn>1</l:mn><l:mo>)</l:mo></l:mrow></l:math> surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi–Bi hopping terms, and no Bi–In interaction, gives a deeper insight into the spin texture. Published by the American Physical Society 2024

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Journal
Physical Review Research
Published
2024-11-08
DOI
https://doi.org/10.1103/physrevresearch.6.043116
Citations
3
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
1.01

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article

Topological material in the III–V family: Heteroepitaxial InBi on InAs

Christine Richter, Uros Djukic, Laurent Nicolaï, Jun Fujii et al.
3 citations
Physical Review Research
Topological Materials and Phenomena
1.01
article

Topological material in the III–V family: Heteroepitaxial InBi on InAs

Christine Richter, Uros Djukic, Laurent Nicolaï, Jun Fujii, Pavol Šutta, J. Sadowski, H. Ebert, J. Adell, Mats Leandersson, J. Minář, Gavin R. Bell, Jonathan D. Denlinger, K. Hricovíni, I. Vobornik, O. Heckmann, Martin Gmitra, Jürgen Braun, Jean-Michel Mariot
article en
3 citations

Abstract

<a:math xmlns:a="http://www.w3.org/1998/Math/MathML"><a:mrow><a:mi>InBi</a:mi><a:mo>(</a:mo><a:mn>0</a:mn><a:mspace width="0.16em"/><a:mn>0</a:mn><a:mspace width="0.16em"/><a:mn>1</a:mn><a:mo>)</a:mo></a:mrow></a:math> is formed epitaxially on <d:math xmlns:d="http://www.w3.org/1998/Math/MathML"><d:mrow><d:mi>InAs</d:mi><d:mo>(</d:mo><d:mn>1</d:mn><d:mspace width="0.16em"/><d:mn>1</d:mn><d:mspace width="0.16em"/><d:mn>1</d:mn><d:mo>)</d:mo></d:mrow></d:math>-A by depositing Bi onto an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the <g:math xmlns:g="http://www.w3.org/1998/Math/MathML"><g:mover><g:mi mathvariant="normal">M</g:mi><g:mo>¯</g:mo></g:mover></g:math> high symmetry point. This demonstrates a heteroepitaxial system entirely in the III–V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III–V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of <i:math xmlns:i="http://www.w3.org/1998/Math/MathML"><i:mrow><i:mi>InBi</i:mi><i:mo>(</i:mo><i:mn>0</i:mn><i:mspace width="0.16em"/><i:mn>0</i:mn><i:mspace width="0.16em"/><i:mn>1</i:mn><i:mo>)</i:mo></i:mrow></i:math> terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the <l:math xmlns:l="http://www.w3.org/1998/Math/MathML"><l:mrow><l:mi>InBi</l:mi><l:mo>(</l:mo><l:mn>0</l:mn><l:mspace width="0.16em"/><l:mn>0</l:mn><l:mspace width="0.16em"/><l:mn>1</l:mn><l:mo>)</l:mo></l:mrow></l:math> surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi–Bi hopping terms, and no Bi–In interaction, gives a deeper insight into the spin texture. Published by the American Physical Society 2024

Physical Review ResearchVol. 6(4)
Lund University (SE), University of Pavol Jozef Šafárik (SK), Université Paris-Saclay (FR), AREA Science Park (IT), University of Warwick (GB), Sorbonne Université (FR), Institute of Experimental Physics of the Slovak Academy of Sciences (SK), Istituto Officina dei Materiali (IT), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), MAX IV Laboratory (SE), CY Cergy Paris Université (FR), Laboratoire Interactions, Dynamiques et Lasers (FR), Advanced Light Source, Laboratoire Médiations (FR), Ludwig-Maximilians-Universität München (DE), University of West Bohemia in Pilsen (CZ), Polish Academy of Sciences (PL)
U.S. Department of Energy, Slovenská Akadémia Vied, Ministerstvo školstva, vedy, výskumu a športu Slovenskej republiky, Agentúra na Podporu Výskumu a Vývoja, Ministero dell'Università e della Ricerca, European Regional Development Fund, Advanced Light Source
Openalex Percentile: Top 24%
Topological Materials and Phenomena
1.01
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